Description
Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the�fundamental physical principles and theory behind nanoscale transistors.�The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-? technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book.Typham this is the title: Fundamentals of Nanoscaled Field Effect Transistors





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